| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 180 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 10 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 mW |
| Threshold Voltage | 1.5 V |
| Input Capacitance | 7.00 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 180 mA |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 85pF @25V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The ZVNL120A is a 200V E-Line N-channel Enhancement Mode Vertical DMOS FET ideal for telephone handsets.
● Low threshold
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