TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0076 Ω |
Polarity | N-Channel |
Power Dissipation | 98 W |
Threshold Voltage | 1.9 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 4.8 ns |
Input Capacitance (Ciss) | 1880pF @30V(Vds) |
Input Power (Max) | 98 W |
Fall Time | 2.4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 107W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Material | Silicon |
Size-Width | 4.7 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
This 7.6 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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