| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 125 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -5.00 A |
| Case/Package | TO-261-4 |
| Polarity | PNP |
| Power Dissipation | 1.6 W |
| Gain Bandwidth Product | 125 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 5A |
| hFE Min | 100 @1A, 1V |
| Input Power (Max) | 3 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Implement this PNP ZX5T953GTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
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