TYPE | DESCRIPTION |
---|
Number of Pins | 6 Pin |
Case/Package | SOT-23 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.1 Ω |
Power Dissipation | 1.7 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 60 V |
Operating Temperature (Max) | 150 ℃ |
The ZXMN6A08E6 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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