TYPE | DESCRIPTION |
---|
Case/Package | SOT-223 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.13 Ω |
Power Dissipation | 3.9 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 70 V |
Operating Temperature (Max) | 150 ℃ |
The ZXMN7A11G is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. This new generation of Trench MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage applications.
● Low threshold
● Low gate drive
● Halogen-free, Green device
● Qualified to AEC-Q101 standards for high reliability
● Moisture sensitivity level 1 as per J-STD-020
● UL94V-0 Flammability rating
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