| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 130 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 5.00 A |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 1.56 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 5A |
| hFE Min | 100 @2A, 1V |
| hFE Max | 300 @2A, 1V |
| Input Power (Max) | 1.2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1560 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
Add switching and amplifying capabilities to your electronic circuit with this NPN ZXTN2018FTA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1560 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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