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IRF540PBF Other Datasheet PDF - VISHAY

Manufacturer:	VISHAY
Category:	MOSFETs
Case Package:	TO-220-3
Description:	TO-220-3 N-CH 100V 28A 77mΩ
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

IRF540PBFDatasheet PDF

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10/31/03

www.irf.com 1

AUTOMOTIVE MOSFET

PD - 94758

HEXFET

Power MOSFET

DSS

= 100V

DS(on)

= 26.5mΩ

= 36A

Specifically designed for Automotive applications,

this HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

Description

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Features

IRF540Z

IRF540ZS

IRF540ZL

Pak

IRF540ZS

TO-220AB

IRF540Z

TO-262

IRF540ZL

Absolute Maximum Ratings

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V

urrent

= 25°C

Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

AS (Thermally limited)

anc

nergy

(Tested )

anc

nergy

este

anc

urrent



epet

anc

nergy

Operating Junction and

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case

––– 1.64 °C/W

θCS

Case-to-Sink, Flat Greased Surface

0.50 –––

θJA

Junction-to-Ambient

––– 62

θJA

Junction-to-Ambient (PCB Mount)

––– 40

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N

0.61

± 20

Max.

140

120

See Fig.12a, 12b, 15, 16

WWW.100Y.COM.TW WWW.100Y.COM.TW WWW.100Y.COM.TW

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IRF540PBF Other Datasheet PDF

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