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MG600Q1US41Datasheet PDF
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MG300Q1US41
2001-04-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG300Q1US41
High Power Switching Applications
Motor Control Applications
High input impedance
High speed : t
f
= 0.5µs (Max.)
t
rr
= 0.5µs (Max.)
Low saturation voltage : V
CE(sat)
= 4.0V (Max.)
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-emitter voltage V
CES
1200 V
Gate-emitter voltage V
GES
±20 V
DC I
C
300
Collector current
1ms I
CP
600
A
DC I
F
300
Forward current
1ms I
FM
600
A
Collector power dissipation (Tc = 25°C) P
C
2000 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−40 ~ 125 °C
Isolation voltage V
Isol
2500
(AC 1 minute)
V
Screw torque (Terminal : M4 / M6 / mounting) ― 2 / 3 / 3 N·m
JEDEC ―
EIAJ ―
TOSHIBA 2-109A4A
Weight: 465g
Unit: mm
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