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RN1102CTDatasheet PDF
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RN1101CT ~ RN1106CT
2009-04-13
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101CT,RN1102CT,RN1103CT
RN1104CT,RN1105CT,RN1106CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2101CT to RN2106CT
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage
RN1101CT to 1106CT
V
CEO
20 V
RN1101CT to 1104CT 10
Emitter-base voltage
RN1105CT, 1106CT
V
EBO
5
V
Collector current I
C
50 mA
Collector power dissipation P
C
50 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1101CT ro 1106CT
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-1J1A
Weight: 0.75 mg (typ.)
R1
R2
B
C
E
Type No. R1 (kΩ) R2 (kΩ)
RN1101CT 4.7 4.7
RN1102CT 10 10
RN1103CT 22 22
RN1104CT 47 47
RN1105CT 2.2 47
RN1106CT 4.7 47
３
１２
0.25±0.03
1.0±0.05
0.65±0.02
0.35±0.02
0.15±0.03
0.25±0.03
0.5±0.03
0.6±0.05
0.38
+0.02
-0.03
0.05±0.03
0.05±0.03
CST3
1.BASE
2. EMITTER
3, COLLECTOR
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