| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | Case E |
| Forward Voltage | 875mV @4A |
| Thermal Resistance | 22℃/W (RθJL) |
| Reverse recovery time | 30 ns |
| Forward Current | 6000 mA |
| Maximum Forward Voltage (Max) | 875mV @4A |
| Forward Current (Max) | 6 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
FEATURES:
●· Chip Outline Dimensions: 68 x 68 mils
●· Chip Thickness: 8 to 12 mils
●· Anode Metallization: Aluminum
●· Metallization Thickness: 70,000ÃNominal
●· Bonding Area: 42 x 42 mils Min.
●· Back Metallization: Gold-3000ÃNominal
●· Junction Passivated with Thermal Silicon Dioxide - Planar Design
●· Backside Available with Solderable Ag Backside as JANHCF or JANKCF
Microsemi
5 Pages / 0.28 MByte
Microsemi
3 Pages / 0.21 MByte
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