TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-323 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.3 Ω |
Power Dissipation | 290 mW |
Threshold Voltage | 500 mV |
Drain to Source Voltage (Vds) | 20 V |
Operating Temperature (Max) | 150 ℃ |
The DMG1012UW is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard.
● Low ON-resistance
● Low gate threshold voltage
● Low input capacitance
● Fast switching speed
● Low input/output leakage
● ESD protected up to 2KV
● Halogen-free, Green device
● Qualified to AEC-Q101 standards for high reliability
● Moisture sensitivity level 1 as per J-STD-020
● UL94V-0 Flammability rating
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