2N3716 Datasheet PDF - Central Semiconductor

Manufacturer:	Central Semiconductor
Category:	BJTs
Case Package:	TO-3
Description:	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin
Documentation:	2N3716 Datasheet (2 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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2N3716 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Frequency	4 MHz
Number of Pins	3 Pin
Case/Package	TO-3
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @1A, 2V
Input Power (Max)	150 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW