| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 2A |
| hFE Min | 80 |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PBSS5350T is a 3A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
● High collector current capability
● High collector current gain
● Improved efficiency due to reduced heat generation
● NPN complement is PBSS4350T
● ZD Marking code
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