TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 1.70 A |
Case/Package | TO-261-4 |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.4 Ω |
Polarity | N-Channel |
Power Dissipation | 3 W |
Threshold Voltage | 1 V |
Input Capacitance | 350 pF |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 1.67 A |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 350pF @25V(Vds) |
Input Power (Max) | 3 W |
Fall Time | 16 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Increase the current or voltage in your circuit with this ZVN4310GTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
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