| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 630 mW |
| Gain Bandwidth Product | 300 MHz |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Continuous Collector Current | 0.3A |
| hFE Min | 60 @10mA, 5V |
| hFE Max | 50 @1mA, 5V |
| Input Power (Max) | 630 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 630 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Size-Length | 4.8 mm |
| Size-Width | 4.2 mm |
| Size-Height | 5.2 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 630mW Through Hole TO-92-3
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