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2N6111G
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2N6111G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-220-3
Description:TO-220AB PNP 30V 7A
Documentation:2N6111G Datasheet (5 Pages)Package Outline Dimension on5 Page
Part Numbering System on1 Page4 Page5 Page
2N6111G Application Note (5 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
2N6111G Datasheet PDF (5 Pages)
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2N6111G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency10 MHz
Number of Pins3 Pin
Voltage Rating (DC)-30.0 V
Current Rating-7.00 A
Case/PackageTO-220-3
Number of Positions3 Position
PolarityPNP
Power Dissipation40 W
Gain Bandwidth Product10 MHz
Breakdown Voltage (Collector to Emitter)30 V
Continuous Collector Current7A
hFE Min30 @3A, 4V
hFE Max150
Input Power (Max)40 W
DC Current Gain (hFE)10
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)40 W
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2N6111G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
MaterialSilicon
Size-Length10.28 mm
Size-Width4.83 mm
Size-Height15.75 mm
Operating Temperature-65℃ ~ 150℃ (TJ)
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2N6111G Documents

2N6111G Datasheet
ON Semiconductor
5 Pages / 0.09 MByte
2N6111G Other Datasheet PDF
ON Semiconductor
16 Pages / 0.79 MByte
2N6111G Drawing Diagrams
ON Semiconductor
2 Pages / 0.02 MByte
2N6111G Application Note
ON Semiconductor
5 Pages / 0.1 MByte
2N6111G Notice File
ON Semiconductor
5 Pages / 0.15 MByte
2N6111G Other References
ON Semiconductor
1 Pages / 0.13 MByte

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