TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | VESM |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 0.15A |
hFE Min | 120 |
hFE Max | 240 |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Toshiba
5 Pages / 0.14 MByte
Toshiba
Trans GP BJT NPN 50V 0.15A 3Pin VESM Embossed T/R
Toshiba
Bipolar Transistors - BJT 100mA 50V
Toshiba
Bipolar Transistors - BJT 100mA 50V
Toshiba
GENERAL-PURPOSE AMPLIFIER
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