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2SCR346PT100P
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2SCR346PT100P Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:BJTs
Case Package:SC-62-3
Description:Bipolar Transistors - BJT NPN 400V Vceo 100mA Ic MPT3
Documentation:2SCR346PT100P Datasheet (7 Pages)
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2SCR346PT100P Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins4 Pin
Case/PackageSC-62-3
Number of Positions3 Position
Power Dissipation500 mW
Breakdown Voltage (Collector to Emitter)400 V
hFE Min82 @10mA, 10V
hFE Max270 @10mA, 10V
Input Power (Max)500 mW
DC Current Gain (hFE)82
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)2000 mW
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2SCR346PT100P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature150℃ (TJ)
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2SCR346PT100P Documents

2SCR346PT100P Datasheet
ROHM Semiconductor
7 Pages / 1.36 MByte
2SCR346PT100P Other Datasheet PDF
ROHM Semiconductor
7 Pages / 1.36 MByte

2SCR346PT100 Documents

2SCR346PT100P Datasheet PDF
ROHM Semiconductor
Bipolar Transistors - BJT NPN 400V Vceo 100mA Ic MPT3
2SCR346PT100Q Datasheet PDF
ROHM Semiconductor
Bipolar Transistors - BJT NPN 400V Vceo 100mA Ic MPT3
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