| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252 |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 2.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV). Switching Applications. Chopper Regulator, DC/DC Converter and Motor Drive Applications.
●Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.).
● High forward transfer admittance: |Yfs| = 2.0 S (typ.).
● Low leakage current: IDSS = −100 μA (max) (VDS = −200 V).
● Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA).
Toshiba
6 Pages / 0.17 MByte
Toshiba
6 Pages / 0.18 MByte
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