| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Single 3-input NAND gate；FEATURES Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) ±24 mA output drive (VCC = 3.0 V) CMOS low power consumption Latch-up performance ≤250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from −40 °C to +85 °C and −40 °C to +125 °C
NXP
NAND Gate 1Element 3IN CMOS 6Pin TSSOP T/R
Diodes
NAND Gate 1Element 3IN CMOS 6Pin SOT-363 T/R
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NAND Gate 1Element 3IN CMOS 6Pin SOT-26 T/R
Nexperia
IC GATE NAND 1CH 3-INP 6-TSSOP
Nexperia
IC GATE NAND 1CH 3-INP 6-TSOP
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NAND Gate 1Element 3IN CMOS 6Pin TSOP T/R
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NAND Gate 1Element 3IN CMOS 6Pin SOT-23 T/R
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NAND Gate 1Element 3IN CMOS 6Pin DFN T/R
Nexperia
IC: digital; NAND; Channels:1; Inputs:3; CMOS; SMD; SC74; Series: LVC
Nexperia
IC: digital; NAND; Channels:1; Inputs:3; CMOS; SMD; SC88; Series: LVC
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