| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 54.0 A |
| Case/Package | TO-220-3 |
| Power Dissipation | 118 W |
| Input Capacitance | 1.59 nF |
| Gate Charge | 36.0 nC |
| Drain to Source Voltage (Vds) | 55.0 V |
| Continuous Drain Current (Ids) | 54.0 A |
| Rise Time | 74 ns |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.3 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
General description
●Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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