| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Power Dissipation | 536000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 536 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 536000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this APT75GN60LDQ3G IGBT transistor from Microsemi. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
Microsemi
9 Pages / 0.44 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
13 Pages / 0.67 MByte
Microsemi
40 Pages / 4.07 MByte
APT
IGBT 600V 155A 536W TO264
Microsemi
Trans IGBT Chip N-CH 600V 155A 536000mW 3Pin(3+Tab) TO-264
Microsemi
Trans IGBT Chip N-CH 600V 155A 536000mW 3Pin(3+Tab) TO-264
Microchip
IGBT 600V 155A 536W TO264
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