| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Frequency | 175 MHz |
| Number of Pins | 4 Pin |
| Current Rating | 20 A |
| Case/Package | M-174 |
| Power Dissipation | 300 W |
| Threshold Voltage | 3.6 V |
| Drain to Source Voltage (Vds) | 130 V |
| Breakdown Voltage (Drain to Source) | 130 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Output Power | 150 W |
| Gain | 22 dB |
| Test Current | 250 mA |
| Input Capacitance (Ciss) | 383pF @50V(Vds) |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300000 mW |
| Voltage Rating | 130 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
| Material | Silicon |
| Operating Temperature | 65℃ ~ 150℃ |
Need a MOSFET that will work in radio frequency environments? This VRF152 RF amplifier made from Microsemi is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 300000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 175 MHz. This N channel RF power MOSFET operates in depletion mode.
Microsemi
6 Pages / 0.43 MByte
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