| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.027 Ω |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 42A |
| Rise Time | 84 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRLR2905 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized design, provides an extremely efficient and reliable operation.
● Advanced planar technology
● Logic level gate drive
● Low ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
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