| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 100 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Rise Time | 79.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PH30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
● Combines low conduction losses with high switching speed
● Tighter parameter distribution and higher efficiency than previous generations
● IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
● Latest generation 4 IGBTs offer highest power density motor controls possible
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