TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 10.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 80 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 10A |
hFE Min | 20 @3A, 4V |
Input Power (Max) | 80 W |
DC Current Gain (hFE) | 20 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 80000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Width | 4.9 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 100V 10A 3MHz 80W Through Hole TO-247
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