| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 260 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -800 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Gain Bandwidth Product | 260 MHz |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 0.8A |
| hFE Min | 250 @100mA, 1V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BC327-40ZL1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
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