TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 1.00 A |
Case/Package | TO-92-3 |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 1A |
hFE Min | 10000 @100mA, 5V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 160 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Gain Bandwidth | 200 MHz |
Power Dissipation (Max) | 1500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92-3
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