| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -100 mA |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 360 MHz |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 180 @2mA, 5V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 30V 100mA 360MHz 625mW Through Hole TO-92-3
ON Semiconductor
7 Pages / 0.07 MByte
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332 Pages / 3.03 MByte
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