TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 50 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -1.00 A |
Case/Package | TO-92-3 |
Power Rating | 800 mW |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 1 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 1A |
hFE Min | 40 @150mA, 2V |
hFE Max | 160 |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 25 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
Size-Length | 4.58 mm |
Size-Width | 3.93 mm |
Size-Height | 5.33 mm |
Operating Temperature | 150℃ (TJ) |
The BC640TA is a PNP Epitaxial Silicon Transistor designed for use in switching and amplifier applications.
● Complement to BC639
● -55 to 150°C Operating junction temperature range
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