| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 40.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 4600pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTH40N30 is a MegaMOS™ single N-channel enhancement-mode standard Power MOSFET offers rugged polysilicon gate cell structure and high power density. It is suitable for DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Low RDS (ON) HDMOS™ process
● Low package inductance (<5nH) - Easy to drive and to protect
● Fast switching times
● Easy to mount with 1 screw (isolated mounting screw hole)
● Space saving
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