TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 175 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.25 W |
Gain Bandwidth Product | 175 MHz |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 2.5A |
hFE Min | 300 @10mA, 2V |
hFE Max | 300 @10mA, 2V |
Input Power (Max) | 1.25 W |
DC Current Gain (hFE) | 450 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1810 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ |
Jump-start your electronic circuit design with this versatile NPN ZXTN25100DFHTA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
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