| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -65.0 V |
| Current Rating | -100 mA |
| Case/Package | SC-70-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 220 @2mA, 5V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 150 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BC856BWT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in a package which is designed for low power surface-mount applications.
● AEC-Q101 qualified and PPAP capable
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