| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 62 W |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Rise Time | 6.50 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 62 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This STGD10NC60KDT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 62000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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