| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 6.00 A |
| Case/Package | TO-220-3 |
| Power Rating | 65 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 65 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 15 @3A, 4V |
| Input Power (Max) | 65 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 65000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
Features
●■ STmicroelectronics PREFERRED SALESTYPES
●Applications
●■ SWITCHING APPLICATIONS
●■ LINEAR APPLICATIONS
●Description
●The BD243C device is a silicon Epitaxial-Base NPN transistor mounted in Jedec TO-220 plastic
●package. It’s intend for use in medium power linear and switching applications. The complementary PNP type is BD244C.
ST Microelectronics
10 Pages / 0.32 MByte
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20 Pages / 2.6 MByte
ST Microelectronics
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