| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 50.0 mA |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 830 mW |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 50 @25mA, 20V |
| Input Power (Max) | 830 mW |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 830 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 250V 50mA 60MHz 830mW Through Hole TO-92-3
ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.01 MByte
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