| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18-3 |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-206AA (TO-18)
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6 Pages / 0.09 MByte
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Trans GP BJT PNP 60V 0.6A 3Pin UB
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Trans GP BJT PNP 60V 0.6A 4Pin UA
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Trans GP BJT PNP 60V 0.6A 3Pin CSOT-23
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Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin UB
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
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