| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-343-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Input Capacitance | 1.3 pF |
| Breakdown Voltage (Collector to Emitter) | 4.5 V |
| Gain | 10.5dB ~ 21.5dB |
| hFE Min | 110 @80mA, 3V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 650 H6327 is a NPN high linearity wideband Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 30mA the device supports energy efficient designs. The typical transition frequency is approximately 42GHz, hence the device offers high power gain at frequencies up to 5GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
● Linear low-noise driver amplifier
● Easy to use
● Halogen-free
Infineon
29 Pages / 1.47 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
30 Pages / 1.1 MByte
Infineon
21 Pages / 0.73 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Bipolar - RF Transistor, NPN, 4.5V, 42GHz, 0.5W(1/2W), 150mA, 100
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