| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 450 mW |
| Input Capacitance | 0.83 pF |
| Output Power | 10 dBm |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 18 dB |
| hFE Min | 60 @10mA, 8V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 450 mW |
| Supply Voltage | 24 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The BFU530AR RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
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