| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Current Rating | 50.0 mA |
| Case/Package | T-1 |
| Rise/Fall Time | 2.3 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 850 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 850 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 2 µs |
| Breakdown Voltage (Collector to Emitter) | 70 V |
| Input Power (Max) | 100 mW |
| Fall Time | 2.3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Material | Silicon |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 4.5 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The BPW85B is a clear Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation and suitable for visible and near infrared radiation.
● High photo sensitivity
● High radiant sensitivity
● ±25° Angle of half sensitivity
Vishay Semiconductor
6 Pages / 0.09 MByte
Vishay Semiconductor
6 Pages / 0.09 MByte
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