| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Current Rating | 50.0 mA |
| Case/Package | T-1 |
| Rise/Fall Time | 2.3 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 850 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 850 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 2 µs |
| Breakdown Voltage (Collector to Emitter) | 70 V |
| Input Power (Max) | 100 mW |
| Fall Time | 2.3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 4.5 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The BPW85A is a Silicon NPN Phototransistor with high radiant sensitivity in clear plastic package. It is sensitive to visible and near infrared radiation. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
● Leaded package
● High photo sensitivity
● High radiant sensitivity
● Suitable for visible and near infrared radiation
● Fast response time
● ϕ = ±25° Angle of half sensitivity
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