| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Current Rating | 50.0 mA |
| Case/Package | T-1 |
| Rise/Fall Time | 2.3 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 850 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 850 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 2 µs |
| Breakdown Voltage (Collector to Emitter) | 70.0 V |
| Fall Time | 2.3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 4.5 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The BPW85C is a Silicon NPN Phototransistor with high radiant sensitivity in clear plastic package. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
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6 Pages / 0.09 MByte
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6 Pages / 0.09 MByte
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