TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 250 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 4.5 Ω |
Polarity | N-Channel |
Power Dissipation | 350 mW |
Threshold Voltage | 3 V |
Input Capacitance | 60pF @25V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 250 mA |
Input Capacitance (Ciss) | 60pF @25V(Vds) |
Input Power (Max) | 350 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.45 mm |
Size-Height | 4.32 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Small Signal MOSFET 250 mAmps, 200 Volts
●N−Channel TO−92
●250 mAMPS, 200 VOLTS
●RDS(on)= 6.4
●Features
●•AEC Qualified
●•PPAP Capable
●•This is a Pb−Free Device
ON Semiconductor
2 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Motorola
250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
ON Semiconductor
MOSFET; N-Ch; VDSS 200VDC; RDS(ON) 14Ω; ID 250mA; TO-92 (TO-226); PD 350mW; -55℃
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