| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 650 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 50.0 mA |
| Case/Package | SOT-23-3 |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| hFE Min | 60 @4mA, 10V |
| hFE Max | 60 @4mA, 10V |
| Input Power (Max) | 225 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
Fairchild
8 Pages / 0.12 MByte
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10 Pages / 0.23 MByte
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1 Pages / 0.04 MByte
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