| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 4.50 A |
| Case/Package | TSSOP-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 32 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 630pF @10V(Vds) |
| Input Power (Max) | 600 mW |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.4 mm |
| Size-Width | 3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild"s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
●Features
●· 4.5 A, 20 V. RDS(ON)= 32 mW@ VGS= 4.5 V
● RDS(ON)= 45 mW@ VGS= 2.5 V
●· Optimized for use in battery circuit applications
●· Extended VGSSrange (±10V) for battery applications
●· High performance trench technology for extremely low RDS(ON)
●· Low profile TSSOP-8 package
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