| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363-6 |
| Power Rating | 0.5 W |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.27 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 550 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | ±20 V |
| Continuous Drain Current (Ids) | 0.88A |
| Rise Time | 2.2 ns |
| Input Capacitance (Ciss) | 55pF @10V(Vds) |
| Input Power (Max) | 500 mW |
| Fall Time | 0.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSD840N H6327 is a N-channel Small Signal Transistor for DC-to-DC converters, eMobility, on-board charger and telecom applications.
● Enhancement-mode
● Avalanche rated
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9 Pages / 0.42 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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19 Pages / 0.88 MByte
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Trans MOSFET N-CH 20V 0.88A 6Pin SOT-363 T/R
Infineon
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
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