TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 2.40 A |
Case/Package | Micro-8 |
Power Rating | 1.25 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.135 Ω |
Polarity | N-Channel, Dual N-Channel |
Power Dissipation | 1.25 W |
Part Family | IRF7503 |
Threshold Voltage | 1 V |
Input Capacitance | 210 pF |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 2.40 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 210pF @25V(Vds) |
Input Power (Max) | 1.25 W |
Fall Time | 5.3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.25 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 3 mm |
Size-Height | 0.86 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
● Generation V Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (
● Available in Tape & Reel
● Fast Switching
● Lead-Free
Infineon
8 Pages / 0.98 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH Si 30V 2.4A 8Pin Micro
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.135Ω)
International Rectifier
Trans MOSFET N-CH 30V 2.4A 8Pin Micro T/R
International Rectifier
Trans MOSFET N-CH Si 30V 2.4A 8Pin Micro T/R
Infineon
Trans MOSFET N-CH 30V 2.4A 8Pin Micro Tube
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