TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 5.00 A |
Case/Package | TO-220-3 |
Power Rating | 75 W |
Polarity | NPN |
Power Dissipation | 75 W |
Breakdown Voltage (Collector to Emitter) | 500 V |
Continuous Collector Current | 5A |
hFE Min | 6 @3A, 2.5V |
hFE Max | 14 |
Input Power (Max) | 75 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 75000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
●The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN TRANSISTOR
●■ HIGH VOLTAGE CAPABILITY
●■ LOW SPREAD OF DYNAMIC PARAMETERS
●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
●■ VERY HIGH SWITCHING SPEED
●■ FULLY CHARACTERISED AT 125oC
●■ LARGE RBSOA
●APPLICATIONS
●■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
●■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS
ST Microelectronics
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