| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 8 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 125 V |
| Current Rating | 25.0 A |
| Case/Package | TO-3 |
| Power Rating | 150 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 125 V |
| hFE Min | 20 @10A, 2V |
| hFE Max | 60 |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 39.5 mm |
| Size-Width | 26.2 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | 200℃ (TJ) |
DESCRIPTION
●The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN TRANSISTOR
●■ HIGH CURRENT CAPABILITY
●■ FAST SWITCHING SPEED
●APPLICATIONS
●■ MOTOR CONTROL
●■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
5 Pages / 0.03 MByte
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