| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 1.30 V |
| Case/Package | T-3 |
| Number of Positions | 2 Position |
| Forward Voltage | 1.3 V |
| Wavelength | 950 nm |
| Viewing Angle | 55° |
| Peak Wavelength | 950 nm |
| Power Dissipation | 160 mW |
| Rise Time | 800 ns |
| Test Current | 50 mA |
| Forward Current | 50 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 100 mA |
| Fall Time | 450 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -25 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Color | Infrared |
| Size-Length | 3.3 mm |
| Size-Width | 2.4 mm |
| Size-Height | 2.2 mm |
| Operating Temperature | -25℃ ~ 85℃ (TA) |
The CQY36N is a 950nm Infrared Emitting Diode with GaAs technology moulded in a clear plastic miniature package without lens.
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Good spectral matching with Si photodetectors
● Package matches with detector BPW16N
Vishay Semiconductor
7 Pages / 0.22 MByte
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5 Pages / 0.09 MByte
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1 Pages / 0.16 MByte
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IR transmitter; 1.8mm; 950nm; 160mW; 55°; THT
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CQY36N Infrared Emitting Diode, 950nm, T-3/4 (2mm) Through Hole package
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